Model for Staebler-Wronski Degradation Deduced from Long-Term, Controlled Light-Soaking Experiments
نویسنده
چکیده
Long-term light-soaking experiments of amorphous silicon photovoltaic modules have now established that stabilization of the degradation occurs at levels that depend significantly on the operating conditions, as well as on the operating history of the modules. We suggest that stabilization occurs because of the introduction of degradation mechanisms with different time constants and annealing activation energies, depending on the exposure conditions. Stabilization will occur once a sufficient accumulation of different degradation mechanisms occurs. We find that operating module temperature during light-soaking is the most important parameter for determining stabilized performance. Next in importance is the exposure history of the device. The precise value of the light intensity seems least important in determining the stabilized efficiency, as long as its level is a significant fraction of 1-sun.
منابع مشابه
Structural disorder induced in hydrogenated amorphous silicon by light soaking
We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler–Wronski degradation could be achieved by a less-ordered material which is closer to the...
متن کاملPhotoinduced dehydrogenation of defects in undoped a-si:H using positron annihilation spectroscopy.
We report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in v...
متن کاملLong Term Behaviour of Passively Heated or Cooled A-si:h Modules
We compare the outdoor performance of single junction a-Si:H PV-modules which were mounted in three different ways. One was thermally well isolated against convection and radiation losses in order to reach maximum operating temperatures. A second one was fixed onto a radiator to keep its temperature as close as possible to the one of the air. A third one served as reference and was mounted with...
متن کاملAtomistic simulation of light-induced changes in hydrogenated amorphous silicon
We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon (a-Si:H) to light exposure (the Staebler– Wronski effect). We obtain improved microscopic understanding of photovoltaic operation, compute the motion of H atoms, and modes of lightinduced degradation of photovoltaics. We clarify existing models of lightinduced change in a-Si:H and show that the ‘hy...
متن کاملLight-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge
To take into account the presence of multiple light-induced defect states in hydrogenated amorphous silicon (a-Si:H) the evolution of the entire spectra of photoconductive subgap absorption, a(hn), has been analyzed. Using this approach two distinctly different light-induced defect states centered around 1.0 and 1.2 eV from the conduction band edge are clearly identified. Results are presented ...
متن کامل